Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTHS5404T1G
Per Unit
$0.68
RFQ
1,656
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 20V 5.2A CHIPFET - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead ChipFET™ 1.3W (Ta) N-Channel - 20V 5.2A (Ta) 30 mOhm @ 5.2A, 4.5V 600mV @ 250µA 18nC @ 4.5V - 2.5V, 4.5V ±12V
STS6NF20V
Per Unit
$1.19
RFQ
3,050
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 20V 6A 8SOIC STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 20V 6A (Tc) 40 mOhm @ 3A, 4.5V 600mV @ 250µA 11.5nC @ 4.5V 460pF @ 15V 1.95V, 4.5V ±12V
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