- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,917
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Renesas Electronics America | MOSFET N-CH 30V 88A TO-263 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | N-Channel | - | 30V | 88A (Tc) | 2.4 mOhm @ 44A, 10V | 2.5V @ 250µA | 250nC @ 10V | 13500pF @ 25V | 4.5V, 10V | ±20V | ||
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2,282
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Vishay Siliconix | MOSFET N-CH 30V 60A 10-POLARPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 5.2W (Ta), 125W (Tc) | N-Channel | - | 30V | 60A (Tc) | 1.7 mOhm @ 25A, 10V | 2V @ 250µA | 250nC @ 10V | 13000pF @ 15V | 4.5V, 10V | ±12V | ||
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2,126
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Texas Instruments | MOSFET N-CH 25V 100A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (5x6) | 3.2W (Ta), 195W (Tc) | N-Channel | - | 25V | 100A (Ta) | 0.59 mOhm @ 50A, 10V | 1.9V @ 250µA | 250nC @ 10V | 14000pF @ 12V | 4.5V, 10V | ±20V | |||
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2,068
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Texas Instruments | MOSFET N-CH 25V 100A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.2W (Ta), 195W (Tc) | N-Channel | - | 25V | 100A (Ta) | 0.59 mOhm @ 50A, 10V | 1.9V @ 250µA | 250nC @ 10V | 14000pF @ 12V | 4.5V, 10V | ±20V | |||
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2,111
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Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 250W (Tc) | N-Channel | - | 40V | 180A (Tc) | 1.1 mOhm @ 100A, 10V | 4V @ 200µA | 250nC @ 10V | 20000pF @ 20V | 10V | ±20V | |||
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3,476
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Vishay Siliconix | MOSFET N-CH 40V 200A TO263-7 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7 | 375W (Tc) | N-Channel | - | 40V | 200A (Tc) | 1 mOhm @ 35A, 10V | 3.5V @ 250µA | 250nC @ 10V | 15525pF @ 25V | 10V | ±20V | |||
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1,701
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Infineon Technologies | MOSFET N-CH 100V 130A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 100V | 130A (Tc) | 7 mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | 10V | ±20V | |||
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2,173
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Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 250W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.5 mOhm @ 100A, 10V | 4V @ 200µA | 250nC @ 10V | 20000pF @ 20V | 10V | ±20V | |||
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1,253
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Infineon Technologies | MOSFET N-CH 75V 100A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V |
