- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,184
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Infineon Technologies | MOSFET N-CH 600V 20A TO-263 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 600V | 20A (Tc) | 190 mOhm @ 13A, 10V | 5.5V @ 1mA | 103nC @ 10V | 3000pF @ 25V | 10V | ±20V | ||
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2,956
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Nexperia USA Inc. | MOSFET N-CH 60V 100A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 263W (Tc) | N-Channel | - | 60V | 100A (Tc) | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | 7480pF @ 25V | 10V | ±20V | |||
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2,194
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STMicroelectronics | MOSFET N-CH 80V 130A | Automotive, AEC-Q101, STripFET™ F7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 4.8W (Ta), 135W (Tc) | N-Channel | - | 80V | 130A (Tc) | 3.6 mOhm @ 13A, 10V | 4.5V @ 250µA | 103nC @ 10V | 6800pF @ 40V | 10V | ±20V | |||
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667
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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1,177
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8DSOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.8 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V |
