4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD16408Q5C
Per Unit
$1.79
RFQ
2,170
Ships today + free overnight shipping
Texas Instruments MOSFET N-CH 25V 113A 8SON NexFET™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSON-CLIP (5x6) 3.1W (Ta) N-Channel - 25V 22A (Ta), 113A (Tc) 4.5 mOhm @ 25A, 10V 2.1V @ 250µA 8.9nC @ 4.5V 1300pF @ 12.5V 4.5V, 10V +16V, -12V
TSM320N03CX RFG
Per Unit
$0.56
RFQ
3,414
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 5.5A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.8W (Tc) N-Channel - 30V 5.5A (Tc) 32 mOhm @ 4A, 4.5V 900mV @ 250µA 8.9nC @ 4.5V 792pF @ 15V 2.5V, 4.5V ±12V
IRLML6244TRPBF
Per Unit
$0.53
RFQ
727
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 20V 6.3A SOT-23 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) N-Channel - 20V 6.3A (Ta) 21 mOhm @ 6.3A, 4.5V 1.1V @ 10µA 8.9nC @ 4.5V 700pF @ 16V 2.5V, 4.5V ±12V
CSD16408Q5
Per Unit
$1.62
RFQ
1,471
Ships today + free overnight shipping
Texas Instruments MOSFET N-CH 25V 113A 5X6 8SON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.1W (Ta) N-Channel - 25V 22A (Ta), 113A (Tc) 4.5 mOhm @ 25A, 10V 2.1V @ 250µA 8.9nC @ 4.5V 1300pF @ 12.5V 4.5V, 10V +16V, -12V
Page 1 / 1