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- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,171
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Infineon Technologies | MOSFET N-CH 60V 7A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | ||
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1,395
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Infineon Technologies | MOSFET N-CH 60V 7A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | |||
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3,101
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Texas Instruments | MOSFET N-CH 30V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (5x6) | 3.2W (Ta) | N-Channel | - | 30V | 32A (Ta), 100A (Tc) | 2 mOhm @ 30A, 8V | 1.6V @ 250µA | 31nC @ 4.5V | 4280pF @ 15V | 3V, 8V | +10V, -8V |
