- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,307
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ON Semiconductor | MOSFET N-CH 400V 0.4A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 2W (Tc) | N-Channel | 400V | 400mA (Tc) | 5.5 Ohm @ 220mA, 10V | 2V @ 250µA | 5.5nC @ 10V | 121pF @ 25V | 10V | ±20V | ||
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3,386
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ON Semiconductor | MOSFET N-CH 400V 1.7A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 39W (Tc) | N-Channel | 400V | 1.7A (Tc) | 5.5 Ohm @ 220mA, 10V | 2V @ 250µA | 5.5nC @ 10V | 121pF @ 25V | 10V | ±20V | ||
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3,849
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Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | ||
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3,636
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Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89-4-2 | 1W (Ta) | N-Channel | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | ||
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1,125
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Infineon Technologies | MOSFET N-CH 250V 5A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 33.8W (Tc) | N-Channel | 250V | 5A (Tc) | 425 mOhm @ 2.5A, 10V | 4V @ 13µA | 5.5nC @ 10V | 430pF @ 100V | 10V | ±20V | |||
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1,486
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Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89-4-2 | 1W (Ta) | N-Channel | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | ||
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2,061
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Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89-4-2 | 1W (Ta) | N-Channel | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | |||
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2,810
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Nexperia USA Inc. | MOSFET N-CH 55V 11A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 36W (Tc) | N-Channel | 55V | 11A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.5nC @ 10V | 322pF @ 25V | 10V | ±20V | |||
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1,424
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Vishay Siliconix | MOSFET N-CH 60V 1.6A SC70-6 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 3.3W (Tc) | N-Channel | 60V | 1.7A (Tc) | 120 mOhm @ 3.8A, 10V | 2.5V @ 250µA | 5.5nC @ 10V | 344pF @ 15V | 4.5V, 10V | ±20V | |||
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615
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Diodes Incorporated | MOSFET N-CH 30V 1.1A SC59-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 500mW (Ta) | N-Channel | 30V | 1.1A (Ta) | 240 mOhm @ 1A, 10V | 3V @ 1mA | 5.5nC @ 10V | 150pF @ 10V | 4.5V, 10V | ±20V | |||
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3,936
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Nexperia USA Inc. | MOSFET N-CH 30V TO-236AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 460mW (Ta), 4.5W (Tc) | N-Channel | 30V | 3A (Ta) | 72 mOhm @ 3A, 10V | 2.5V @ 250µA | 5.5nC @ 10V | 160pF @ 15V | 4.5V, 10V | ±20V | |||
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1,457
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Nexperia USA Inc. | MOSFET N-CHANNEL 30V 3A TO236AB | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 460mW (Ta) | N-Channel | 30V | 3A (Ta) | 72 mOhm @ 3A, 10V | 2.5V @ 250µA | 5.5nC @ 10V | 160pF @ 15V | 4.5V, 10V | ±20V |
