- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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811
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Infineon Technologies | MOSFET N-CH 30V 14A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | - | 30V | 14A (Ta) | 12 mOhm @ 15A, 4.5V | 1V @ 250µA | 33nC @ 5V | 2335pF @ 16V | 4.5V | ±12V | ||
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3,699
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NXP USA Inc. | MOSFET N-CH 30V 98A LFPAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 98A (Tc) | 3.8 mOhm @ 25A, 10V | 2V @ 1mA | 33nC @ 5V | 3190pF @ 10V | 5V, 10V | ±20V | ||
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2,873
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Vishay Siliconix | MOSFET N-CH 8V 12.2A 2X2 4-MFP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, CSPBGA | 4-Microfoot | 2.78W (Ta), 6.25W (Tc) | N-Channel | - | 8V | 12.2A (Tc) | 31 mOhm @ 1A, 4.5V | 1V @ 250µA | 33nC @ 5V | 1950pF @ 4V | 1.2V, 4.5V | ±5V | ||
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1,322
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Vishay Siliconix | MOSFET N-CH 8V 12.2A 2X2 4-MFP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, CSPBGA | 4-Microfoot | 2.78W (Ta), 6.25W (Tc) | N-Channel | - | 8V | 12.2A (Tc) | 31 mOhm @ 1A, 4.5V | 1V @ 250µA | 33nC @ 5V | 1950pF @ 4V | 1.8V, 4.5V | ±5V | ||
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3,237
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Vishay Siliconix | MOSFET N-CH 30V 7.8A 8-TSSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | 1.5W (Ta) | N-Channel | - | 30V | - | 14 mOhm @ 7.8A, 10V | 1V @ 250µA (Min) | 33nC @ 5V | - | 4.5V, 10V | ±20V | ||
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3,570
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Infineon Technologies | MOSFET N-CH 30V 14A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | - | 30V | 14A (Ta) | 12 mOhm @ 15A, 4.5V | 1V @ 250µA | 33nC @ 5V | 2335pF @ 16V | 4.5V | ±12V | ||
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GET PRICE |
659
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ON Semiconductor | MOSFET N-CH 30V 11A SSOT-8 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Gull Wing | SuperSOT™-8 | 1.8W (Ta) | N-Channel | - | 30V | 11A (Ta) | 9 mOhm @ 11A, 10V | 3V @ 250µA | 33nC @ 5V | 2560pF @ 15V | 4.5V, 10V | ±20V | ||
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1,024
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ON Semiconductor | MOSFET N-CH 30V 80A D2PAK | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 68W (Tc) | N-Channel | - | 30V | 80A (Ta) | 7 mOhm @ 40A, 10V | 3V @ 250µA | 33nC @ 5V | 2440pF @ 15V | 4.5V, 10V | ±20V | ||
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3,028
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Vishay Siliconix | MOSFET N-CH 30V 7.8A 8-TSSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | 1.5W (Ta) | N-Channel | - | 30V | - | 14 mOhm @ 7.8A, 10V | 1V @ 250µA (Min) | 33nC @ 5V | - | 4.5V, 10V | ±20V | ||
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3,504
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|
Rohm Semiconductor | MOSFET N-CH 30V 11A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2W (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.6 mOhm @ 11A, 10V | 2.5V @ 1mA | 33nC @ 5V | 2000pF @ 10V | 4V, 10V | ±20V | ||
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1,663
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Nexperia USA Inc. | MOSFET N-CH 100V 47A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 185°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 167W (Tc) | N-Channel | - | 100V | 47A (Tc) | 28 mOhm @ 25A, 10V | 2V @ 1mA | 33nC @ 5V | 3805pF @ 25V | 5V, 10V | ±15V | |||
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1,940
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Nexperia USA Inc. | MOSFET N-CH 100V 46A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 157W (Tc) | N-Channel | - | 100V | 46A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 1mA | 33nC @ 5V | 4360pF @ 25V | 5V, 10V | ±15V |
