Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI1012CR-T1-GE3
Per Unit
$0.55
RFQ
2,410
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 20V 0.63A SC-75A TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75A 240mW (Ta) N-Channel 20V - 396 mOhm @ 600mA, 4.5V 1V @ 250µA 2nC @ 8V 43pF @ 10V 1.5V, 4.5V ±8V
SI1062X-T1-GE3
Per Unit
$0.53
RFQ
3,774
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 20V SC-89 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-89, SOT-490 SC-89-3 220mW (Ta) N-Channel 20V - 420 mOhm @ 500mA, 4.5V 1V @ 250µA 2.7nC @ 8V 43pF @ 10V 1.5V, 4.5V ±8V
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