Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPW4R008NH,L1Q
Per Unit
$1.93
RFQ
2,599
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 80V 116A 8DSOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-DSOP Advance 800mW (Ta), 142W (Tc) N-Channel - 80V 116A (Tc) 4 mOhm @ 50A, 10V 4V @ 1mA 59nC @ 10V 5300pF @ 40V 10V ±20V
TPH4R008NH,L1Q
Per Unit
$3.00
RFQ
2,028
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N CH 80V 60A SOP ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 78W (Tc) N-Channel - 80V 60A (Tc) 4 mOhm @ 30A, 10V 4V @ 1mA 59nC @ 10V 5300pF @ 40V 10V ±20V
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