2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM3K309T(TE85L,F)
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RFQ
1,041
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.7A TSM - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 20V 4.7A (Ta) 31 mOhm @ 4A, 4V - - 1020pF @ 10V 1.8V, 4V ±12V
SIA426DJ-T1-GE3
Per Unit
$1.00
RFQ
2,585
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Vishay Siliconix MOSFET N-CH 20V 4.5A SC70-6 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) N-Channel - 20V 4.5A (Tc) 23.6 mOhm @ 9.9A, 10V 1.5V @ 250µA 27nC @ 10V 1020pF @ 10V 2.5V, 10V ±12V
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