Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STB20N90K5
Per Unit
$6.81
RFQ
2,965
Ships today + free overnight shipping
STMicroelectronics N-CHANNEL 900 V, 0.24 OHM TYP., MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 250W (Tc) N-Channel - 900V 20A (Tc) 250 mOhm @ 10A, 10V 5V @ 100µA 40nC @ 10V 1500pF @ 100V 10V ±30V
STB28N60DM2
Per Unit
$5.76
RFQ
1,077
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 21A MDmesh™ DM2 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 170W (Tc) N-Channel - 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 5V @ 250µA 34nC @ 10V 1500pF @ 100V 10V ±25V
STB20N95K5
Per Unit
$6.95
RFQ
2,636
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 950V 17.5A D2PAK SuperMESH5™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) N-Channel - 950V 17.5A (Tc) 330 mOhm @ 9A, 10V 5V @ 100µA 40nC @ 10V 1500pF @ 100V 10V ±30V
Page 1 / 1