Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMG9N65CT
Per Unit
$0.93
RFQ
3,774
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CH 650V 9A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 165W (Tc) N-Channel - 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 10V ±30V
IPZ40N04S53R1ATMA1
Per Unit
$1.29
RFQ
3,851
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 71W (Tc) N-Channel - 40V 40A (Tc) 3.1 mOhm @ 20A, 10V 3.4V @ 30µA 41nC @ 10V 2310pF @ 25V 7V, 10V ±20V
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