Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDS5692Z
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RFQ
3,501
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 50V 5.8A 8-SOIC UltraFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 50V 5.8A (Ta) 24 mOhm @ 5.8A, 10V 3V @ 250µA 25nC @ 10V 1025pF @ 25V 4.5V, 10V ±20V
IRL6342TRPBF
Per Unit
$0.69
RFQ
3,349
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 30V 9.9A 8SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 9.9A (Ta) 14.6 mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1025pF @ 25V 2.5V, 4.5V ±12V
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