- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,659
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Infineon Technologies | MOSFET N-CH 650V 16A TO-263 | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 139W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | ||
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3,391
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Infineon Technologies | MOSFET N-CH 650V 16A TO-263 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 139W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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2,485
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Infineon Technologies | MOSFET N-CH 650V 16A TO-263 | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 139W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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2,938
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STMicroelectronics | MOSFET N-CH 650V 24A TO220FP | MDmesh™ DM2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 650V | 24A (Tc) | 130 mOhm @ 12A, 10V | 5V @ 250µA | 43nC @ 10V | 1870pF @ 100V | 10V | ±25V | |||
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3,075
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Infineon Technologies | MOSFET N-CH 650V 16A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 34W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 1.1mA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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1,036
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Infineon Technologies | MOSFET N-CH 650V 16A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 139W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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1,976
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ON Semiconductor | MOSFET N-CH 650V 10.2A TO220 | FRFET®, SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 33W (Tc) | N-Channel | - | 650V | 10.2A (Tc) | 380 mOhm @ 5.1A, 10V | 5V @ 1mA | 43nC @ 10V | 1680pF @ 100V | 10V | ±20V |
