- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,043
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 40W (Tc) | N-Channel | - | 500V | 12A (Ta) | 620 mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | ||
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2,555
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STMicroelectronics | MOSFET N-CH 500V 22A TO220FP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 500V | 22A (Tc) | 140 mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | 2565pF @ 25V | 10V | ±25V | ||
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938
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STMicroelectronics | MOSFET N-CH 500V 27A TO-220FP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 500V | 27A (Tc) | 115 mOhm @ 13.5A, 10V | 4V @ 250µA | 94nC @ 10V | 2740pF @ 50V | 10V | ±25V | ||
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2,091
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STMicroelectronics | MOSFET N-CH 500V 17A TO-220FP | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 500V | 17A (Tc) | 270 mOhm @ 8.5A, 10V | 4.5V @ 100µA | 119nC @ 10V | 2600pF @ 25V | 10V | ±30V |