Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDPF7N50F
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RFQ
2,472
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ON Semiconductor MOSFET N-CH 500V 6A TO-220F UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38.5W (Tc) N-Channel - 500V 6A (Tc) 1.15 Ohm @ 3A, 10V 5V @ 250µA 20nC @ 10V 960pF @ 25V 10V ±30V
FDPF7N50
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RFQ
898
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ON Semiconductor MOSFET N-CH 500V 7A TO-220F UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 500V 7A (Tc) 900 mOhm @ 3.5A, 10V 5V @ 250µA 16.6nC @ 10V 940pF @ 25V 10V ±30V
FDPF7N50U
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RFQ
3,945
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ON Semiconductor MOSFET N-CH 500V 5A TO-220F UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 500V 5A (Tc) 1.5 Ohm @ 2.5A, 10V 5V @ 250µA 16.6nC @ 10V 940pF @ 25V 10V ±30V
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