Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMP1011UCB9-7
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RFQ
3,065
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Diodes Incorporated MOSFET P-CH 8V 10A U-WLB1515-9 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, WLBGA U-WLB1515-9 890mW (Ta) P-Channel - 8V 10A (Ta) 10 mOhm @ 2A, 4.5V 1.1V @ 250µA 10.5nC @ 4.5V 1060pF @ 4V 2.5V, 4.5V -6V
CSD22202W15
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RFQ
3,575
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Texas Instruments MOSFET P-CH 8V 10A 9DSBGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.5W (Ta) P-Channel - 8V 10A (Ta) 12.2 mOhm @ 2A, 4.5V 1.1V @ 250µA 8.4nC @ 4.5V 1390pF @ 4V 2.5V, 4.5V -6V
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