- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,692
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Infineon Technologies | MOSFET N-CH 200V 24A TO262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
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2,458
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Infineon Technologies | MOSFET N-CH 200V 24A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||
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1,147
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Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
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3,929
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Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||
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648
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Infineon Technologies | MOSFET P-CH 20V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | P-Channel | - | 20V | 24A (Tc) | 42 mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | 1460pF @ 15V | 2.5V, 4.5V | ±8V |
