- Manufacture :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,072
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IXYS | MOSFET N-CH | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 390W (Tc) | N-Channel | 650V | 24A (Tc) | 145 mOhm @ 12A, 10V | 5V @ 250µA | 36nC @ 10V | 2060pF @ 25V | 10V | ±30V | ||||
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2,728
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Vishay Siliconix | MOSFET N-CH 650V 24A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | 650V | 24A (Tc) | 145 mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | 2740pF @ 100V | 10V | ±30V | ||||
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1,770
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 650V 24A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | 650V | 24A (Tc) | 156 mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | 2656pF @ 100V | 10V | ±20V | ||||
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2,290
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 650V 24A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | 650V | 24A (Tc) | 145 mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | 2740pF @ 100V | 10V | ±30V |