4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
C3M0280090J-TR
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RFQ
2,821
Ships today + free overnight shipping
Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Digi-Reel® SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
C3M0280090J-TR
Per Unit
$3.55
RFQ
1,299
Ships today + free overnight shipping
Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Cut Tape (CT) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
C3M0280090J-TR
Per Unit
$3.45
RFQ
1,086
Ships today + free overnight shipping
Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Tape & Reel (TR) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
C3M0280090J
Per Unit
$3.45
RFQ
3,456
Ships today + free overnight shipping
Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
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