- Manufacture :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,654
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Microsemi Corporation | MOSFET N-CH 1200V 15A ISOTOP | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 450W (Tc) | N-Channel | 1200V | 15A (Tc) | 800 mOhm @ 7.5A, 10V | 4V @ 2.5mA | 485nC @ 10V | 7800pF @ 25V | 10V | ±30V | ||
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3,409
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Microsemi Corporation | MOSFET N-CH 1200V 15A SP1 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 357W (Tc) | N-Channel | 1200V | 15A (Tc) | 816 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6696pF @ 25V | 10V | ±30V | ||
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3,179
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Microsemi Corporation | MOSFET N-CH 1200V 15A SP1 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 357W (Tc) | N-Channel | 1200V | 15A (Tc) | 816 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6696pF @ 25V | 10V | ±30V | ||
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1,618
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IXYS | MOSFET N-CH 1200V 15A SOT-227B | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 540W (Tc) | N-Channel | 1200V | 15A (Tc) | 900 mOhm @ 8.5A, 20V | 5V @ 250µA | 155nC @ 15V | 8300pF @ 25V | 20V | ±30V | |||
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3,290
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IXYS | MOSFET N-CH 1200V 15A ISOPLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 320W (Tc) | N-Channel | 1200V | 15A (Tc) | 500 mOhm @ 13A, 10V | 6.5V @ 1mA | 225nC @ 10V | 14000pF @ 25V | 10V | ±30V | |||
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1,316
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GeneSiC Semiconductor | TRANS SJT 1200V 15A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK (7-Lead) | 106W (Tc) | - | 1200V | 15A (Tc) | - | - | - | - | - | - |
