- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,092
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 100V 170A TO-3P | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 715W (Tc) | N-Channel | - | 100V | 170A (Tc) | 9 mOhm @ 500mA, 10V | 5V @ 250µA | 198nC @ 10V | 6000pF @ 25V | 10V | ±20V | |||
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638
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 60V 170A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 375W (Tc) | N-Channel | - | 60V | 170A (Tc) | 5.6 mOhm @ 85A, 10V | 4V @ 250µA | 290nC @ 10V | 9350pF @ 25V | 10V | ±25V |
