Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
MTP2P50EG
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RFQ
1,436
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CH 500V 2A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel - 500V 2A (Tc) 6 Ohm @ 1A, 10V 4V @ 250µA 27nC @ 10V 1183pF @ 25V 10V ±20V
MTP2P50E
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RFQ
1,504
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ON Semiconductor MOSFET P-CH 500V 2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel - 500V 2A (Tc) 6 Ohm @ 1A, 10V 4V @ 250µA 27nC @ 10V 1183pF @ 25V 10V ±20V
IXTP2N80P
Per Unit
$1.01
RFQ
3,136
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IXYS MOSFET N-CH 800V 2A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 800V 2A (Tc) 6 Ohm @ 1A, 10V 5.5V @ 50µA 10.6nC @ 10V 440pF @ 25V 10V ±30V
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