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- Series :
- Part Status :
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- Operating Temperature :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,034
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Infineon Technologies | MOSFET N-CH 30V 50A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 94W (Tc) | N-Channel | - | 30V | 50A (Tc) | 6.6 mOhm @ 50A, 10V | 2V @ 40µA | 25nC @ 5V | 2782pF @ 15V | 4.5V, 10V | ±20V | ||
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3,234
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Infineon Technologies | MOSFET N-CH 60V 64A 8TDSON | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 46W (Tc) | N-Channel | - | 60V | 64A (Tc) | 6.6 mOhm @ 50A, 10V | 3.3V @ 20µA | 21nC @ 10V | 1500pF @ 30V | 6V, 10V | ±20V | ||
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602
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Infineon Technologies | MOSFET N-CH 60V 64A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 46W (Tc) | N-Channel | - | 60V | 64A (Tc) | 6.6 mOhm @ 50A, 10V | 3.3V @ 20µA | 21nC @ 10V | 1500pF @ 30V | 6V, 10V | ±20V | |||
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1,265
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Infineon Technologies | MOSFET N-CH 60V 64A 8TDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 46W (Tc) | N-Channel | - | 60V | 64A (Tc) | 6.6 mOhm @ 50A, 10V | 3.3V @ 20µA | 21nC @ 10V | 1500pF @ 30V | 6V, 10V | ±20V | |||
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1,128
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IXYS | MOSFET N-CH 65V 130A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 65V | 130A (Tc) | 6.6 mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
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3,730
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IXYS | MOSFET N-CH 65V 130A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 250W (Tc) | N-Channel | - | 65V | 130A (Tc) | 6.6 mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | 4800pF @ 25V | 10V | ±20V |
