- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,690
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IXYS | MOSFET N-CH 100V 133A ISOPLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 300W (Tc) | N-Channel | - | 100V | 133A (Tc) | 9 mOhm @ 100A, 10V | 5V @ 8mA | 235nC @ 10V | 7600pF @ 25V | 10V | ±20V | |||
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3,285
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Infineon Technologies | MOSFET N-CH 100V 170A SUPER247 | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-274AA | SUPER-247 (TO-274AA) | 580W (Tc) | N-Channel | - | 100V | 170A (Tc) | 9 mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | 6790pF @ 25V | 10V | ±30V | |||
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1,789
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Infineon Technologies | MOSFET N-CH 100V 170A SUPER247 | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-274AA | SUPER-247 (TO-274AA) | 580W (Tc) | N-Channel | - | 100V | 170A (Tc) | 9 mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | 6790pF @ 25V | 10V | ±30V |
