Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STFI26NM60N
Per Unit
$5.30
RFQ
3,575
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 20A I2PAK FP MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 35W (Tc) N-Channel 600V 20A (Tc) 165 mOhm @ 10A, 10V 4V @ 250µA 60nC @ 10V 1800pF @ 50V 10V ±25V
STFI26N60M2
Per Unit
$3.47
RFQ
2,291
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 20A I2PAKFP MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 30W (Tc) N-Channel 600V 20A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA - - 10V ±25V
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