- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,868
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 11A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 62.5W (Tc) | N-Channel | 600V | 11A (Tc) | 380 mOhm @ 2.7A, 10V | 4V @ 250µA | 21nC @ 10V | 810pF @ 100V | 10V | ±30V | |||
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780
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 8A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 41.7W (Tc) | N-Channel | 600V | 8A (Tc) | 600 mOhm @ 1.7A, 10V | 4V @ 250µA | 16nC @ 10V | 528pF @ 100V | 10V | ±30V | |||
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848
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 12A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 69W (Tc) | N-Channel | 800V | 12A (Tc) | 400 mOhm @ 2.7A, 10V | 4V @ 250µA | 51nC @ 10V | 1848pF @ 100V | 10V | ±30V | |||
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2,959
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 18A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 59.5W (Tc) | N-Channel | 600V | 18A (Tc) | 190 mOhm @ 3.7A, 10V | 4V @ 250µA | 32nC @ 10V | 1311pF @ 100V | 10V | ±30V |