Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFP180N10T2
Per Unit
$3.91
RFQ
2,727
Ships today + free overnight shipping
IXYS MOSFET N-CH 100V 180A TO-220 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 480W (Tc) N-Channel - 100V 180A (Tc) 6 mOhm @ 50A, 10V 4V @ 250µA 185nC @ 10V 10500pF @ 25V 10V ±20V
IXFH400N075T2
Per Unit
$12.68
RFQ
3,073
Ships today + free overnight shipping
IXYS MOSFET N-CH 75V 400A TO-247 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 1000W (Tc) N-Channel - 75V 400A (Tc) 2.3 mOhm @ 100A, 10V 4V @ 250µA 420nC @ 10V 24000pF @ 25V 10V ±20V
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