Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
HUF75645P3
Per Unit
$2.99
RFQ
3,594
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 100V 75A TO-220AB UltraFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 310W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 75A, 10V 4V @ 250µA 238nC @ 20V 3790pF @ 25V 10V ±20V
HUF75542P3
Per Unit
$2.95
RFQ
2,891
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 80V 75A TO-220AB UltraFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 80V 75A (Tc) 14 mOhm @ 75A, 10V 4V @ 250µA 180nC @ 20V 2750pF @ 25V 10V ±20V
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