- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,298
Ships today + free overnight shipping
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 25A TO220 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 357W (Tc) | N-Channel | - | 650V | 25A (Tc) | 190 mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | 10V | ±30V | |||
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2,795
Ships today + free overnight shipping
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 25A TO262 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 357W (Tc) | N-Channel | - | 650V | 25A (Tc) | 190 mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | 10V | ±30V | |||
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3,916
Ships today + free overnight shipping
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 25A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | - | 28W (Tc) | N-Channel | - | 650V | 25A (Tc) | 190 mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | 10V | ±30V | |||
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1,107
Ships today + free overnight shipping
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 25A TO220F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 50W (Tc) | N-Channel | - | 650V | 25A (Tc) | 190 mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | 10V | ±30V |
