- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,477
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Vishay Siliconix | MOSFET N-CH 250V 8.1A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | 250V | 8.1A (Tc) | 450 mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | 10V | ±20V | ||
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1,091
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STMicroelectronics | MOSFET N-CH 100V 26A TO-220 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 85W (Tc) | N-Channel | 100V | 26A (Tc) | 60 mOhm @ 12A, 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | 10V | ±20V | |||
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3,843
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ON Semiconductor | MOSFET N-CH 60V 50A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 120W (Tc) | N-Channel | 60V | 50A (Tc) | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 10V | ±25V | |||
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1,406
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Vishay Siliconix | MOSFET N-CH 250V 5.6A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | 250V | 5.6A (Tc) | 450 mOhm @ 3.4A, 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | 10V | ±20V | |||
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3,016
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 8A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 40.3W (Tc) | N-Channel | 800V | 8A (Tc) | 1.05 Ohm @ 4A, 10V | 4V @ 250µA | 41nC @ 10V | 1921pF @ 25V | 10V | ±30V | |||
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1,361
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 8A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 40.3W (Tc) | N-Channel | 800V | 8A (Tc) | 1.05 Ohm @ 4A, 10V | 4V @ 250µA | 41nC @ 10V | 1921pF @ 25V | 10V | ±30V | |||
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2,614
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Vishay Siliconix | MOSFET N-CH 250V 8.1A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | N-Channel | 250V | 8.1A (Tc) | 450 mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | 10V | ±20V |
