- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,430
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Vishay Siliconix | MOSFET N-CH 250V 2.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | 250V | 2.7A (Tc) | 2 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | ||
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3,421
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Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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1,648
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Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3W (Ta), 36W (Tc) | N-Channel | 200V | 3.3A (Tc) | 1.5 Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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3,454
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Vishay Siliconix | MOSFET N-CH 250V 2.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 23W (Tc) | N-Channel | 250V | 2.1A (Tc) | 2 Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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1,544
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Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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1,010
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ON Semiconductor | MOSFET P-CH 60V 7A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 45W (Tc) | P-Channel | 60V | 7A (Tc) | 410 mOhm @ 3.5A, 10V | 4V @ 250µA | 8.2nC @ 10V | 295pF @ 25V | 10V | ±25V | |||
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616
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Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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3,861
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Vishay Siliconix | MOSFET N-CH 250V 2.7A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 36W (Tc) | N-Channel | 250V | 2.7A (Tc) | 2 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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658
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Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 36W (Tc) | N-Channel | 200V | 3.3A (Tc) | 1.5 Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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3,793
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Vishay Siliconix | MOSFET N-CH 200V 2.6A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | 200V | 2.6A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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732
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Vishay Siliconix | MOSFET N-CH 250V 2.2A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | 250V | 2.2A (Tc) | 2 Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V |
