Package / Case :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFH230N075T2
Per Unit
$5.19
RFQ
1,771
Ships today + free overnight shipping
IXYS MOSFET N-CH 75V 230A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 480W (Tc) N-Channel - 75V 230A (Tc) 4.2 mOhm @ 50A, 10V 4V @ 250µA 178nC @ 10V 10500pF @ 25V 10V ±20V
IXTP230N075T2
Per Unit
$3.95
RFQ
1,308
Ships today + free overnight shipping
IXYS MOSFET N-CH 75V 230A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 480W (Tc) N-Channel - 75V 230A (Tc) 4.2 mOhm @ 50A, 10V 4V @ 250µA 178nC @ 10V 10500pF @ 25V 10V ±20V
STW60NM50N
Per Unit
$18.55
RFQ
3,270
Ships today + free overnight shipping
STMicroelectronics MOSFET N CH 500V 68A TO-247 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel - 500V 68A (Tc) 43 mOhm @ 34A, 10V 4V @ 250µA 178nC @ 10V 5790pF @ 100V 10V ±25V
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