4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFZ34NPBF
Per Unit
$0.98
RFQ
3,184
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 29A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
Default Photo
Per Unit
$1.36
RFQ
3,724
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Diodes Incorporated MOSFET BVDSS: 651V 800V TO251 Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 68W (Tc) N-Channel - 700V 7A (Tc) 900 mOhm @ 1.5A, 10V 4V @ 250µA 18.4nC @ 10V 603pF @ 50V 10V ±30V
AUIRFZ34N
Per Unit
$0.74
RFQ
1,337
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 29A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRF9Z34NPBF
Per Unit
$0.97
RFQ
2,221
Ships today + free overnight shipping
Infineon Technologies MOSFET P-CH 55V 19A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) P-Channel - 55V 19A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 35nC @ 10V 620pF @ 25V 10V ±20V
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