Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHW47N65E-GE3
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RFQ
884
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Vishay Siliconix MOSFET N-CH 650V 47A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 417W (Tc) N-Channel - 650V 47A (Tc) 72 mOhm @ 24A, 10V 4V @ 250µA 273nC @ 10V 5682pF @ 100V 10V ±20V
SIHG47N65E-GE3
Per Unit
$8.37
RFQ
635
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Vishay Siliconix MOSFET N-CH 650V 47A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 417W (Tc) N-Channel - 650V 47A (Tc) 72 mOhm @ 24A, 10V 4V @ 250µA 273nC @ 10V 5682pF @ 100V 10V ±30V
SIHG44N65EF-GE3
Per Unit
$10.19
RFQ
770
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 650V 46A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 417W (Tc) N-Channel - 650V 46A (Tc) 73 mOhm @ 22A, 10V 4V @ 250µA 278nC @ 10V 5892pF @ 100V 10V ±30V
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