- Manufacture :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
21 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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647
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Vishay Siliconix | MOSFET N-CH 900V 3.6A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | 900V | 3.6A (Tc) | 3.7 Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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2,770
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Vishay Siliconix | MOSFET N-CH 900V 3.6A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 900V | 3.6A (Tc) | 3.7 Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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792
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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1,317
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Vishay Siliconix | MOSFET N-CH 900V 1.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 54W (Tc) | N-Channel | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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1,603
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Vishay Siliconix | MOSFET N-CH 900V 1.2A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | 900V | 1.2A (Tc) | 8 Ohm @ 720mA, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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1,267
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 4A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 38.7W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
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730
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 38.7W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
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3,425
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 7A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 40.3W (Tc) | N-Channel | 900V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1969pF @ 25V | 10V | ±30V | |||
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3,227
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 9A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 89W (Tc) | N-Channel | 900V | 9A (Tc) | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | 2470pF @ 25V | 10V | ±30V | |||
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2,872
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Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | |||
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1,094
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Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | |||
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745
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Vishay Siliconix | MOSFET N-CH 900V 3.6A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 900V | 3.6A (Tc) | 3.7 Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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1,698
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 900V 3.6A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 125W (Tc) | N-Channel | 900V | 3.6A (Tc) | 3.7 Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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3,213
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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1,257
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Vishay Siliconix | MOSFET N-CH 900V 4.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | 900V | 4.7A (Tc) | 2.5 Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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2,150
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Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | |||
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1,948
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Vishay Siliconix | MOSFET N-CH 900V 1.9A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | 900V | 1.9A (Tc) | 3.7 Ohm @ 1.1A, 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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2,265
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 900V 1.7A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 54W (Tc) | N-Channel | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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1,099
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 900V 1.7A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 54W (Tc) | N-Channel | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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3,409
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 7A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 40.3W (Tc) | N-Channel | 900V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1969pF @ 25V | 10V | ±30V | |||
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1,953
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 9A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 89W (Tc) | N-Channel | 900V | 9A (Tc) | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | 2470pF @ 25V | 10V | ±30V |
