- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,169
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Vishay Siliconix | MOSFET N-CH 200V 64A TO220AB | ThunderFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 200V | 64A (Tc) | - | 4V @ 250µA | 48nC @ 10V | 1950pF @ 100V | 7.5V, 10V | ±20V | |||
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2,538
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 55V 64A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 63W (Tc) | N-Channel | - | 55V | 64A (Tc) | 8 mOhm @ 34A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
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3,247
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Vishay Siliconix | MOSFET N-CH 650V 64A TO247AC | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 520W (Tc) | N-Channel | - | 650V | 64A (Tc) | 47 mOhm @ 30.5A, 10V | 4V @ 250µA | 371nC @ 10V | 7407pF @ 100V | 10V | ±30V | |||
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3,593
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Vishay Siliconix | MOSFET N-CH 650V 64A TO247AD | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD | 520W (Tc) | N-Channel | - | 650V | 64A (Tc) | 47 mOhm @ 30.5A, 10V | 4V @ 250µA | 371nC @ 10V | 7407pF @ 100V | 10V | ±30V | |||
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1,655
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 55V 64A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V |
