- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,587
Ships today + free overnight shipping
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V 85A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 268W (Tc) | N-Channel | - | 60V | 85A (Tc) | 7.5 mOhm @ 30A, 10V | 4V @ 250µA | 88nC @ 10V | 4560pF @ 30V | 10V | ±20V | |||
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3,461
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 150V 85A TO220AB | TrenchFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2.4W (Ta), 300W (Tc) | N-Channel | - | 150V | 85A (Tc) | 21 mOhm @ 30A, 10V | 4V @ 250µA | 110nC @ 10V | 4750pF @ 25V | 10V | ±20V | |||
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3,996
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Infineon Technologies | MOSFET N-CH 55V 85A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 10V | ±20V | |||
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3,493
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 60V 85A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 60V | 85A (Tc) | 10 mOhm @ 42.5A, 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | 10V | ±25V |
