- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,129
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Vishay Siliconix | MOSFET N-CH 600V 2.2A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 50W (Tc) | N-Channel | 600V | 2.2A (Tc) | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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2,384
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Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 50W (Tc) | N-Channel | 600V | 2.2A (Tc) | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V |
