Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTH24N50
Per Unit
$8.35
RFQ
2,965
Ships today + free overnight shipping
IXYS MOSFET N-CH 500V 24A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 (IXTH) 300W (Tc) N-Channel 500V 24A (Tc) 230 mOhm @ 12A, 10V 4V @ 250µA 190nC @ 10V 4200pF @ 25V 10V ±20V
IXTH21N50
Per Unit
$9.26
RFQ
1,117
Ships today + free overnight shipping
IXYS MOSFET N-CH 500V 21A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 (IXTH) 300W (Tc) N-Channel 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 4V @ 250µA 190nC @ 10V 4200pF @ 25V 10V ±20V
IRFP460PBF
Per Unit
$4.05
RFQ
2,348
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 500V 20A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 280W (Tc) N-Channel 500V 20A (Tc) 270 mOhm @ 12A, 10V 4V @ 250µA 210nC @ 10V 4200pF @ 25V 10V ±20V
Page 1 / 1