Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP4NB100
GET PRICE
RFQ
1,458
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 1KV 3.8A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 1000V 3.8A (Tc) 4.4 Ohm @ 2A, 10V 5V @ 250µA 45nC @ 10V 1400pF @ 25V 10V ±30V
IXFP4N100P
Per Unit
$2.32
RFQ
1,137
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 4A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 1000V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 26nC @ 10V 1456pF @ 25V 10V ±20V
Page 1 / 1