Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCD5N60TM-WS
Per Unit
$1.44
RFQ
3,391
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 600V 4.6A DPAK SuperFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 54W (Tc) N-Channel - 600V 4.6A (Tc) 950 mOhm @ 2.3A, 10V 5V @ 250µA 16nC @ 10V 600pF @ 25V 10V ±30V
FCD5N60TM
Per Unit
$1.52
RFQ
3,580
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 600V 4.6A DPAK SuperFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 54W (Tc) N-Channel - 600V 4.6A (Tc) 950 mOhm @ 2.3A, 10V 5V @ 250µA 16nC @ 10V 600pF @ 25V 10V ±30V
FCD5N60-F085
Per Unit
$1.67
RFQ
3,285
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 600V 4.6A DPAK Automotive, AEC-Q101, SuperFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252) 54W (Tj) N-Channel - 600V 4.6A (Tc) 1.1 Ohm @ 4.6A, 10V 5V @ 250µA 21nC @ 10V 570pF @ 25V 10V ±30V
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