2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF6665TR1PBF
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RFQ
1,543
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 5V @ 250µA 13nC @ 10V 530pF @ 25V 10V ±20V
IRF6665TRPBF
Per Unit
$1.15
RFQ
770
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 5V @ 250µA 13nC @ 10V 530pF @ 25V 10V ±20V
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