- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,238
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Infineon Technologies | MOSFET N-CH 150V 375A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L8 | DIRECTFET L8 | 3.3W (Ta), 125W (Tc) | N-Channel | - | 150V | 375A (Tc) | 11 mOhm @ 40A, 10V | 5V @ 250µA | 150nC @ 10V | 6660pF @ 25V | 10V | ±20V | ||
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1,717
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Infineon Technologies | MOSFET N-CH 150V DIRECTFET L8 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L8 | DIRECTFET L8 | 3.3W (Ta), 125W (Tc) | N-Channel | - | 150V | 375A (Tc) | 11 mOhm @ 40A, 10V | 5V @ 250µA | 150nC @ 10V | 6660pF @ 25V | 10V | ±20V | |||
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3,641
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Infineon Technologies | MOSFET N-CH 200V 72A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | 10V | ±20V |
