4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK11A50D(STA4,Q,M)
Per Unit
$1.80
RFQ
3,504
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 500V 11A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 500V 11A (Ta) 600 mOhm @ 5.5A, 10V 4V @ 1mA 24nC @ 10V 1200pF @ 25V 10V ±30V
TK11A45D(STA4,Q,M)
Per Unit
$1.54
RFQ
1,026
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 450V 11A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 450V 11A (Ta) 620 mOhm @ 5.5A, 10V 4V @ 1mA 20nC @ 10V 1050pF @ 25V 10V ±30V
TK11A60D(STA4,Q,M)
Per Unit
$2.23
RFQ
2,804
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 600V 11A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 11A (Ta) 650 mOhm @ 5.5A, 10V 4V @ 1mA 28nC @ 10V 1550pF @ 25V 10V ±30V
TK11A55D(STA4,Q,M)
Per Unit
$2.16
RFQ
2,382
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 550V 11A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 550V 11A (Ta) 630 mOhm @ 5.5A, 10V 4V @ 1mA 25nC @ 10V 1350pF @ 25V 10V ±30V
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