- Manufacture :
- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,081
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Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | ||
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1,376
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Nexperia USA Inc. | MOSFET N-CH 60V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 324W (Tc) | N-Channel | 60V | 120A (Tc) | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | 10170pF @ 25V | - | - | ||
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1,448
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Nexperia USA Inc. | MOSFET N-CH 60V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 324W (Tc) | N-Channel | 60V | 120A (Tc) | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | 10170pF @ 25V | - | - |
