- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,368
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 2.5A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 56.8W (Tc) | N-Channel | - | 600V | 2.5A (Tc) | 3.5 Ohm @ 1.25A, 10V | 4.5V @ 250µA | 12nC @ 10V | 370pF @ 25V | 10V | ±30V | ||
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2,203
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 2.5A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 56.8W (Tc) | N-Channel | - | 600V | 2.5A (Tc) | 3.5 Ohm @ 1.25A, 10V | 4.5V @ 250µA | 12nC @ 10V | 370pF @ 25V | 10V | ±30V | |||
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3,344
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Infineon Technologies | MOSFET N-CH 55V 17A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 45W (Tc) | N-Channel | - | 55V | 17A (Tc) | 75 mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | 10V | ±20V |
