- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,568
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 950V 10A TO-220 | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 190W (Tc) | N-Channel | - | 950V | 10A (Tc) | 850 mOhm @ 5A, 10V | 5V @ 100µA | 51nC @ 10V | 1620pF @ 100V | 10V | ±30V | |||
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1,051
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 20.2A TO220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 151W (Tc) | N-Channel | - | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 10V | ±20V | |||
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2,929
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 20.2A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 151W (Tc) | N-Channel | - | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 10V | ±20V |
