- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,275
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Vishay Siliconix | MOSFET N-CH 650V 12A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 156W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1224pF @ 100V | 10V | ±30V | |||
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1,964
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CHAN 650V 15A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 271 mOhm @ 7A, 10V | 4V @ 250µA | 98nC @ 10V | 1749pF @ 100V | 10V | ±30V | |||
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2,906
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | |||
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3,287
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Vishay Siliconix | MOSFET N-CH 650V 19.8A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 19.8A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 102nC @ 10V | 2396pF @ 100V | 10V | ±30V | |||
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2,728
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Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10 mOhm @ 25A, 10V | 4V @ 110µA | 44nC @ 10V | 2900pF @ 50V | 10V | ±20V | |||
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619
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Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 156W (Tc) | N-Channel | - | 650V | 24A (Tc) | 105 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
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1,878
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Infineon Technologies | MOSFET N-CH 40V 100A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.25 mOhm @ 100A, 10V | 3.9V @ 150µA | 190nC @ 10V | 6560pF @ 25V | 10V | ±20V | |||
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3,815
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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2,902
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Vishay Siliconix | MOSFET N-CH 650V 15A PWRPAK 8X8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 260 mOhm @ 7A, 10V | 4V @ 250µA | 96nC @ 10V | 1712pF @ 100V | 10V | ±30V | |||
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2,518
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A D2PAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 156W (Tc) | N-Channel | - | 100V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V |