- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,257
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Vishay Siliconix | MOSFET N-CH 60V 56A TO263 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 107W (Tc) | N-Channel | - | 60V | 56A (Tc) | 15 mOhm @ 30A, 10V | 3.5V @ 250µA | 50nC @ 10V | 2480pF @ 25V | 10V | ±20V | |||
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1,703
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
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3,823
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Nexperia USA Inc. | MOSFET N-CH 100V 28A D2PAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 107W (Tc) | N-Channel | - | 100V | 28A (Tc) | 50 mOhm @ 14A, 10V | 4V @ 1mA | 30nC @ 10V | 1240pF @ 25V | 10V | ±20V | |||
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1,379
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ON Semiconductor | MOSFET N-CH 80V 65A POWER56 | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 | 107W (Tc) | N-Channel | - | 80V | 65A (Tc) | 7.5 mOhm @ 65A, 10V | 4V @ 250µA | 46nC @ 10V | 2470pF @ 40V | 10V | ±20V | |||
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1,963
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Infineon Technologies | MOSFET N-CH 55V 44A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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1,971
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Infineon Technologies | MOSFET N-CH 120V 56A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.4 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
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1,896
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Vishay Siliconix | MOSFET N-CH 150V 25A TO252 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 107W (Tc) | N-Channel | - | 150V | 25A (Tc) | 52 mOhm @ 15A, 10V | 4V @ 250µA | 51nC @ 10V | 2200pF @ 25V | 10V | ±20V |
